硅外延发展趋势

The Development Tendencies of Silicon Epitaxy

本文综述了硅外延的三大发展趋势，指出降低外延温度是外延发展的迫切要求；同时比较了分子束外延（ＭＢＥ）、光能增强化学汽相淀积（光ＣＶＤ）、等离子体增强化学汽相淀积（ＰＥＣＶＤ）、超高真空化学汽相淀积（ＵＨＶＣＶＤ）的优缺点，指出ＵＨＶＣＶＤ和ＰＥＣＶＤ二者合二为一是最具应用前景的方法。其次，论述了异质外延和ＳｉＧｅ／Ｓｉ超晶格材料的应用前景。最后，论述了外延生长的原位监测和外延膜的测试技术。

in This paper three major development tendencies of silicon epitaxy have been reviewed. It shows that to lower epitaxy temperature for grow high quality silicon epitaxial film is necessary. Molecular beam eqitaxy (MBE).light enhanced chemical vapor deposition (LECVD). Plasma enhanced chemical vapor deposition(PECVD)、ultra high vacuum chemical vapor deposition(UHVCVD)have been compared, come to a conclusion that the combination of UHVCVD and PECVD is a better choice. Then the application possibility of heteroepitaxy and SiGe/Si superlattice material has been described. At last. in-situ monitoring and measurement technique of epitaxial film have been discussed.