薄淀积膜压阻系数π∥π⊥测量

The Measuring of Piezoresistive Parameters,π π for Thin Deposition Films

半导体薄膜开始用于力敏器件，评价薄膜自身的压阻特性是十分重要的。但迄今报导的参数，通常是薄膜与基片粘附成一体的复合样品测量值，原因在于膜薄难剥，剥离之后测量也不易。建立等效模型，提出新的计算式，以便在基片淀积膜之前和之后，只作常规ε、Ｅ等测量，通过计算就可得到纯薄膜的压阻特性各参数，包括Ｋ、Ｋ、π、π。

The thin semiconductors films make used of force sensitive devices. Evaluate the piezoresistive properties of thin films with oneself is very important. But up to the present, measurement values is determined using the composite sample, that deposited film bind subetrate, because fellow for covering and measuring of film after covered.In this paper we will given fermet equivalent and new formula, by means of common method of measured ε, E etc before and the deposition make obtaining piezoresistive propertic of film with oneself, contains K, K, π,π.