CMOS磁敏器件的研究

The Study of the CMOS Magnetic Field Sensor

分析了ＣＭＯＳ磁敏器件的敏感机理，给出了灵敏度表达式，并对其单元ＳＤ－ＭＯＳＦＥＴ结构进行了数值模拟，实验结果与理论分析相一致。

In this paer, the sensitive mechanism of the CMOS magnetic field sensor has been analyzed and expression or it is given: At the same time, the split-drain MOSFET of the unit of the device has been simulated. The experiment results are in good agreement with the theoretic analysis.