摘要
铝含量为５０％的Ｔａ／Ａｌ复合薄膜由于其具有优良的热稳定性而适用于制造高精密、高稳定功率型电阻或功率集成电阻网络。用钽铝复合靶直流共溅射的方法可以制备这种薄膜，但淀积参数及热处理条件对薄膜的热稳定性能有很大影响。用该复合薄膜制出了功率负荷性能优良的中功率薄膜衰减器。最后，用ＸＰＳ分析了薄膜表面的化学组成。
Ta/Al compeite thin films containing Al 50 at.% have been more and more attractive in the manufacture of the high-accurate and high- stable thin- film power resistance and network due to its excellent thermal stability.This thin film is prepared by DC co-sputtering from tantalum sheet with aluminum discs attached.The influence of depositing parameters and heat treatment conditions on the characteristics of the thin film is studied.It is shown that the film is suitable for the manufacture of thin-film medium-power attenuator.Finally,the composition of the film surface is analysed by XPS.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1995年第6期605-609,共5页
Journal of University of Electronic Science and Technology of China
关键词
复合薄膜
共溅射
热稳定性
功率负荷
钽
铝
Ta/Al composite thin films
co-sputtering
thermal stability
power loading
medium-power attenuator
