摘要
本文介绍了ＩＳＦＥＴ（离子敏场效应管）的结构原理、设计考虑、制造工艺和封装技术，提出了背接触封装结构，提高了ＩＳＦＥＴ型ＰＨ传感器的可靠性和使用寿命。
The structure design,fabrication and package technology of ISFET are described.Anovel backside contact ISFET-PH senser of higher reliabiliy and longer lifetime is presented incomparison with front contact devices.EEACC:2560R,7230, 320T,0170J,0170N
出处
《电子器件》
CAS
1995年第2期110-114,共5页
Chinese Journal of Electron Devices
