摘要
本文对采用MOD法制备的PLZT(8/65/35)铁电薄膜的电性能进行了研究。MOD法可以在ITO/G,Pt/Ti/Si和Pt/LN基片上制备出具有优良铁电性能的PLZT铁电薄膜,采用Pt下电极的PLZT薄膜,Ps>32μC/cm ̄2,而采用ITO电极的也得到了P_s=27μC/cm ̄2的好结果,本文还讨论了下电极和基片对薄膜电性能的影响。
Electrical properties of PLZT (8/65/35) ferroelectric thin films derived frommetallo─organic decomposition (MOD) have been studied in this popers. The PLZT films depositedon ITO/Glass, Pt/Ti/Si and Pt/Y127°LiNbO_3 Substrates using MOD have good ferroelectricproperties. The films depeited on pt sub─electredes have a high P_s>32μC/cm ̄2, and on ITO sub-electrodes have a P_s = 27μC/cm ̄2, The influences of sub─ electrodes and substrates on theelectrical properties are also discussed in this paper.EEACC : 2810F , 2860
出处
《电子器件》
CAS
1995年第2期125-129,共5页
Chinese Journal of Electron Devices