摘要
本文对采用ＭＯＤ法制备的ＰＬＺＴ（８／６５／３５）铁电薄膜的电性能进行了研究。ＭＯＤ法可以在ＩＴＯ／Ｇ，Ｐｔ／Ｔｉ／Ｓｉ和Ｐｔ／ＬＮ基片上制备出具有优良铁电性能的ＰＬＺＴ铁电薄膜，采用Ｐｔ下电极的ＰＬＺＴ薄膜，Ｐｓ＞３２μＣ／ｃｍ￣２，而采用ＩＴＯ电极的也得到了Ｐ＿ｓ＝２７μＣ／ｃｍ￣２的好结果，本文还讨论了下电极和基片对薄膜电性能的影响。
Electrical properties of PLZT (8/65/35) ferroelectric thin films derived frommetallo─organic decomposition (MOD) have been studied in this popers. The PLZT films depositedon ITO/Glass, Pt/Ti/Si and Pt/Y127°LiNbO_3 Substrates using MOD have good ferroelectricproperties. The films depeited on pt sub─electredes have a high P_s>32μC/cm￣2, and on ITO sub-electrodes have a P_s = 27μC/cm￣2, The influences of sub─ electrodes and substrates on theelectrical properties are also discussed in this paper.EEACC : 2810F , 2860
出处
《电子器件》
CAS
1995年第2期125-129,共5页
Chinese Journal of Electron Devices
