摘要
本文介绍一种高可靠的具有自动过流保护的智能高压大功率ＶＤＭＯＳＦＥＴ，已研制出了漏源击穿电压大于２００Ｖ；正常工作电源大于２Ａ；自动保护过电流小于４Ａ的器件。工艺完全与常规ＶＤＭＯＳＦＥＴ一致。这种新颖ＶＤＭＯＳＦＥＴ结构的应用能提高整机可靠性。
A high reliability smart power VDMOSFET of high voltage with over current protec-tion by oneself is descrital in the peper. The transistor with the breakdown voltage more than200V,the operating current more than 2A,the overcurrent protection by oneself lass than 4A hasbeen fabricated. Its processing is as same as general VDMOSFET. The reliabilitg of whole equip-ment is improved by using the new VDMOSFET.
出处
《电子器件》
CAS
1995年第4期227-233,共7页
Chinese Journal of Electron Devices
