弛豫铁电陶瓷PST中反相畴结构的HREM研究

HREM Study of Antiphase Domain Boundaries in Relaxor Ferroelectric Ceramics PST

本工作用高分辨电子显微学方法研究了弛豫铁电陶瓷Ｐｂ（Ｓｃ＿（０．５）Ｔａ＿（０．５）Ｏ＿３（ＰＳＴ）中的有序－无序结构，直接观察到有序－无序结构畴界及反相畴界（ＡＰＢｓ），对反相畴界的结构进行了分析，指出在ＰＳＴ中的反相畴往往是｛１１１｝面的层错，晶格位移在｛１１１｝方向上，位移量是｛１１１｝。提出了在ＰＳＴ中ＡＰＢｓ形成的机制。

The ordered and disordered microstructures have been studied by high resolution electron microscopy(HREM)in relaxor ferroelectric ceramics lead scandium tantalate(PST).The ordered-disordered domainboundaries and antiphase domain boundaries(APBs)have been observed.After analyzing APB structures,weshow that APBs often are the layer displacement of{111},and the desplacement is in<111>direction .The mechanism of the formation of APBs in PST have been discussed.