W波段光控Gunn管谐波振荡器的实验研究

Experimental Study of W-Band Optically Controlled Subharmonic Gunn Diode Oscillator

本文提出了Ｗ波段Ｇｕｎｎ管谐波型光控振荡器的设计方案，该方案在振荡器的基波腔内填充本征半导体Ｓｉ片，并通过光纤将半导体激光器产生的光束耦合到Ｓｉ片，以达到光对振荡器工作频率的控制，在实验中采用波长为０．８６３μｍ的激光照射Ｓｉ片，取得了光控频率达７ＭＨｚ的结果。

In this paper,the W-Band Optically Controlled Subharmonic Gunn diode oscillator is presented.The semiconductor Si piece is loaded in the fundamental cavity of the optically controlled oscillator.The Si piece in the oscillator is illmninated by GaAs/GaAlAs laser emitting at a wavelength of 0.863μm through optical fiber.The optical turning frequency shift of 7MHz is observed in experiment.