摘要
模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有Ｓ型负阻特性的两端器件。在此实验基础上研制得到一种双向两端Ｓ型负阻器件（ＴＢＮＲＤ器件）．本文还对该器件产生负阻的原因进行了理论分析。
The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.Based on this,a Two-terminal Bidirectional Negative Resistance Device(TBNRD) is fabricated and the theory of the negative resistance is studied.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1995年第2期74-77,共4页
Acta Electronica Sinica
基金
国家自然科学基金
关键词
负阻器件
两端器件
Negative resistance device,Two-terminal device
