改善微波功率管小电流特性的模拟分析

A Simulation Study for Improving Low Current Characteristics in Microwave Power Transistors

对于新型Ｎ￣＋ＩＰ发射结结构的微波功率管，采用一维数值模拟，分区计算了它的渡越时间，结果表明其截止频率的小电流特性可以获得明显的改善。

The transit times in the silicon microwave power transistors with the novel structure of N+IP emitter are regionally calculated by one-dimensional numerical simulation. The results indicate that its low current characteristics of the cut-off frequency f_T can be obviously improved.