多晶硅发射极晶体管（PET）Gummel－Poon模型

Gummel-Poon Model for Polysilicon Emitter Bipolar Transistor

本文建立了能直接用于ＳＰＩＣＥ电路分析程序中的ＰＥＴ－ＧＰ模型。研究表明：可以采用两种方法来使用ＰＥＴ－ＧＰ模型。本文利用所研究器件的结构参数计算了ＰＥＴ－ＧＰ模型参数β＿Ｆ和特征频率ｆ＿Ｔ，ｆ＿Ｔ的计算和实验结果符合较好。β＿Ｆ的计算表明，所研究器件的多晶硅／硅界面复合较强，复合速度Ｓ＿ｐ达到１０￣６ｃｍ／ｓ。

PET-GP model has been set up which can be used directly for the analytical program in SPICE circuit. The result indicates:there are two kinds of way which can be adopted to use PETGP model. In this paper,the parameter β_F and cut-off frequency f_T of this model have been calculated by using the structure parameters of the devices studied. The calculating value of f_T and its experimented result have a better agreement. The calculation of βF indicates that the carrier recombination at polysilicon/monosilicon emitter interface for the studied devices is very strong,and the value of recombination velocity S_p is up to 106cm/s.