注入条件对SIMOX材料的影响

Influence of Implantation Conditions on Quality of SIMOX Materials

利用ＲＢＳ和ＴＥＭ技术分析研究了不同注入剂量、注入方式（单重注入，多重注入）对ＳＩＭＯＸ材料各层结构的影响，特别着重研究了Ｓｉ／ＳｉＯ＿２界面过渡区受注入条件的影响．结果表明，在注入剂量相同的情况下，多重注入不仅能改善顶层单晶、ＳｉＯ＿２绝缘层的质量，而且能显著减小Ｓｉ／ＳｉＯ＿２界面过渡区宽度。

The effect of implantation dose, implantation methods (Single implantation,Sequential implantation)on characteristics and structures have been described by techniques of RBS and TEM. Especially the transition region of Si/SiO2 interface is emphatically studied. The results show that the sequentical implantation and annealing(compared with single implantation in the same implantation dose)can not only evidently improve the quality of top layer and buried layer of SIMOX,but also evidently reduce the width of Si/SiO2 interface transition region.