栅控T_c的高温氧化物超导体场效应晶体管

High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c

本文提出了栅控超导临界温度Ｔ_ｃ的高温氧化物超导体场效应晶体管（ＨＴＯＳｓ－ＭＯＳｕＦＥＴ）的原理。建立了场控Ｔ_ｃ的方程，估算和分析了器件特性，对发展和研究ＨＴＯＳｓ－ＭＯＳｕＦＥＴ的器件和电路有积极的指导意义。

This paper presents the principle of High Temperature Oxide Superconductors FieldEffect Transistor(HTOSs-MOSuFET) using gate controlled critical temperature Tc.Tc equation isestablished by gate voltage control,device characteristics are estimated and analyzed.It is very important for the development and investigation of the device and circuits of HTOSs-MOSuFET.