新型低损耗快速薄发射极晶闸管关断时间和通态压降的分析

Analyses on Turn-Off Time and On-State Voltage Drop of a New Type of Thin Emitter Thyristors with Low Loss and High Speed

本文利用非对称ｐｉｎ二极管模型，对新型多晶硅接触薄发射极晶闸管关断时间和通态压降之间的折衷关系进行了较为详细的理论分析和实验研究，并与常规结构进行了比较，数值计算和实验结果表明，在合适的薄发射区厚度和杂质总量下，不但关断时间较常规结构缩短约１．５倍的因子，而且通态压降也低于常规结构；更有意义的是，当ｎＢ基区少子寿命减小到合适值时，关断时间进一步缩短到常晶闸管的１／２．５～１／３，而通态特性没有恶化。

The theoretical analysis and experimental research are made in detail on trade-off relationship between turn-off time and on-state voltage drop of the new type of polysilicon-contacted thin emitter thyristors by using the asymmetrical pin diode model and making comparisons with the conventional thyristors.The numerical calculations and experimental results show that under suitable thickness and total impurity amount of the thin emitter,not only can the turn-off time be shortened by a factor of around 1.5 compared with that of the conventional thyristors,but also the on-state voltage drop of devices is lower than that of the conventional thyristors.More significantly,when the lifetime of minority carriers in the nB base is decreased to a suitable value,the turn-off time of devices can further be shortened up to 1/2.5～1/3 of that of the conventional thyristors without the on-state properties of devices being deteriorated.