摘要
本文较为详细地介绍了薄膜亚微米CMOS/SOS工艺技术的开发过程,薄膜亚微米CMOS/SOS工艺主要包括双固相外延、双层胶光刻形成亚微米细线条硅栅、H2-O2合成氧化薄栅氧化层以及快速退火等新的工艺技术,利用这套工艺成功地研制出了高性能薄膜亚微米(实际沟道长度为0.58μm)CMOS/SOS器件和门延迟时间仅为177ps的19级CMOS/SOS环形振荡器。与厚膜器件相比,薄膜全耗尽器件和电路的性能得到了明显的提高。
A thin film submicron CMOS/SOS fabrication process has been developed.The process includes mainly DSPE(Double Solid Phase Epitaxy) technology-a method to get high performance of SOS material,double layer resist lithography and RIE submicron polysilicon gate process,thin gate oxidation process using H2-O2,and RTA(Rapid Thermal Annealing) technology.High performance fully depleted CMOS/SOS devices and 19-stages CMOS/SOS ring oscillators with 177ps stage delay have been obtained using the process.Remarkable improvement of performance of thinfilm fully-depleted CMOS/SOS devices has been achieved.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1995年第8期24-28,共5页
Acta Electronica Sinica