薄膜亚微米CMOS／SOS工艺的开发及其器件的研制

Development of Thin Film Submicron CMOS/SOS Process and Fabrication of the Devices

本文较为详细地介绍了薄膜亚微米ＣＭＯＳ／ＳＯＳ工艺技术的开发过程，薄膜亚微米ＣＭＯＳ／ＳＯＳ工艺主要包括双固相外延、双层胶光刻形成亚微米细线条硅栅、Ｈ２－Ｏ２合成氧化薄栅氧化层以及快速退火等新的工艺技术，利用这套工艺成功地研制出了高性能薄膜亚微米（实际沟道长度为０．５８μｍ）ＣＭＯＳ／ＳＯＳ器件和门延迟时间仅为１７７ｐｓ的１９级ＣＭＯＳ／ＳＯＳ环形振荡器。与厚膜器件相比，薄膜全耗尽器件和电路的性能得到了明显的提高。

A thin film submicron CMOS/SOS fabrication process has been developed.The process includes mainly DSPE(Double Solid Phase Epitaxy) technology-a method to get high performance of SOS material,double layer resist lithography and RIE submicron polysilicon gate process,thin gate oxidation process using H2-O2,and RTA(Rapid Thermal Annealing) technology.High performance fully depleted CMOS/SOS devices and 19-stages CMOS/SOS ring oscillators with 177ps stage delay have been obtained using the process.Remarkable improvement of performance of thinfilm fully-depleted CMOS/SOS devices has been achieved.