重掺杂硅物理参数的低温特性分析

Analysis of the Low Temperature Characteristics of Physical Parameters in the Heavily Doped Silicon

本文考虑了杂质重掺杂引起的禁带变窄效应，提出了新的电离率和有效多数载流子浓度的数学模型，并应用于由发射效率决定的硅双极晶体管电流增益的计算，所获得的计算结果与实验相符合。这为硅低温半导体器件的设计提供了理论基础。

Under the consideration of the bandgap narrowing effect which is resulted from the heavily doping,we propose a new mathematic temperature model for the ionized fraction and the effective majority-carrier concentration.By using this calculative model,the current gain determined by the emission efficiency in silicon bipolar transistors is derived.The obtained results are in agreement with the experimental data.This provides a beneficial basis for the design of low temperature silicon devices.