摘要
本文用极点分析方法详细地探讨了在高频工作下的CCIIMOSFET-C连续时间带通滤波器,从极点位移直观地反映了MOSFET分布电容及非理想CCII对主极点频率ωp和品质因数Qp的影响.还用计算机模拟进行了验证。
This paper considers in detail the response of CCII based MOSFET-C continuoustime bandpass filter at high frequencies using the pole analysis.The dominant pole deviation reflects directly the effects of distributed capacitance of the MOSFETs and the nonideality of CCII on the dominant pole frequency ωp and quality factor Qp.The analyses are verified with computer simulation.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1995年第8期83-85,共3页
Acta Electronica Sinica
基金
国家自然科学基金