摘要
本文通过对１．５５μｍ双异质结激光器中０．９５μｍ的高能发光峰的分析，证明了ＩｎＧａＡｓＰ有源区的Ａｕｇｅｒ复合是造成载流子向两侧ＩｎＰ限制层漏泄的主要原因，也是影响激光器Ｔ０值的主要因素。
The experiment data about 0.95μm wavelength high energy lumionous peak in 1.55μm InGaAsp/InP laser are analyzed.The results prove that the Auger compound of InGaAsP active region is the major cause of carrier leakage toward the two sides of InP restricted layer.It is also the main factor of the low T0 of1.55μm InGaAsp/InP DH Laser.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1995年第8期112-115,共4页
Acta Electronica Sinica
关键词
双异质结激光器
漏泄
发光带
Auger复合
m InGaAsp/InP DH Laser,Leakage,0.95μm luminous strip,Auger Compound,Carrier
