硅异质结和赝异质结双极器件研究进展

Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices

本文作者结合自己的工作，综述了硅异质结和赝异质结双极器件的研究进展，指出ＧｅＳｉＨＢＴ将成为双极结构的主流技术，硅赝异质结器件也将在低温应用等方面显示出优势。

The research and progress of silicon heterojunction and pseudo-heterojunction bipolar devices are summarized on the basis of our previous work. It is indicated that GeSi HBT will be the dominant technique of silicon bipolar stuctures,and silicon pseudo-heterojunction bipolartransistor has the superiority for low temperature application.