MOSFET亚阈特性分析与低温按比例缩小理论的研究

On the Subthreshold Behaviour and Low Temperature Scale Down Principles in MOSFETs

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件尺寸限在一定的水平。本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器件的优化设计，从而更大程度地提高电路与系统性能具有重要的指导意义。

The scale down of device dimension is an effective way to realize VLSI technology,however,the dimension is limited to a definite level by the influence of some parasitic and second order effects. On the basis of comparative analysis of small devices operating at room temperature and at low temperatures,the subthreshold behaviour and its effects on the device properties and scale downprinciples are described emphatically. A kind of low temperature scale down principle is presented according to the low temperature operation characteristics,which will play an important role in low temperature MOSFET optimal design and further improvement of the circuits and systems.