一种新的超突变结电容电压方程

A New Equation for Capacitance-Voltage Characteristic of the Hyperabrupt Varactors

本文对超突变结构变容二极管进行了深入的研究，在改进的杂质分布模型基础上，推出一种新的超突变结构电容电压特性方程，方程中的主要参数与实际工艺参数一致，解决了以往模型在这方面的不足。

A more practical capacitance-voltage characteristic equation is derived on the basis of theoretic analysis on variable capacitance diode. A modified impurity distribution model is introduced to solve the problem that the main parameters of the model do not concur with the practical parameters.