CMOS／SOI电路模拟与参数提取

CMOS/SOI ICs Simulation and Parameter Extraction

ＳＯＩ－ＭＯＳＦＥＴ主要模型参数得到一致的提取，因而该模型嵌入ＳＰＩＣＥ后能保证ＣＭＯＳ／ＳＯＩ电路的正确模拟工作，从ＣＭＯＳ／ＳＯＩ器件和环振电路的模拟结果和实验结果看，两者符合得较好，说明我们所采用的ＳＯＩＭＯＳＦＥＴ器件模型及其参数提取都是成功的。

A unified and systematic parameter extraction for SOI MOSFET's has been presented,thereby the CMOS/SOI ICs simulation can use simulator such as SPICE after implemented with SOI MOSFET model. The results show that the SOI MOSFET model and the utilization of extraction program are trustworthy.