摘要
基于碳膜固有的负电阻温度特性,在从工艺角度解决高阻碳膜电阻膜层TCR偏高问题的同时,通过对物质的电导率形成机理的分析,提出了以硼置换碳的改性方案,为彻底实现高阻材料国产化提供了理论和实践的依据。
While based on proper negative TCR of carbon film problem of too high TCR absolute value is solved in the field of technology, a programme of modification by substitution of boron for carbon has been advanced, thus provides theoretical and practical basis for thorough realization of domestication of high-resistance materials.
出处
《电子元件与材料》
CAS
CSCD
1995年第5期28-31,共4页
Electronic Components And Materials
关键词
高阻碳膜
电阻率温度系数
电子材料
carbon film having high resistivity
temperature coefficient of resistivity