摘要
本文报道了在Ｚｎ０．７６Ｃｄ０．２４Ｓｅ／ＺｎＳｅ多量子阱（ＭＱＷｓ）中，用不同的Ａｒ＋激光线激发，观察到了共振增强的喇曼散射．首次在室温和７７Ｋ的条件下，用Ａｒ＋的４５７．９ｎｍ谱线激发，观察到分别来自ＺｎＳｅ垒层和Ｚｎ０．７６Ｃｄ０．２４Ｓｅ阱层的限制纵光学声子模（ＬＯ）的喇曼散射，并对上述不同的光学模的起因进行了分析．
Resonant Raman scattering from Zn0.76 Cd0.24 Se/ZnSe MQWs is presented under excitation of vaious lines of Ar+ laser. Very strong 2LO-phonon Raman scattering has been observed with Zn0.76Cd0.24Se well layers. It is ascribed to the strong outgoing resonant enhancement. For the first time, ZnSeWe-like LO phonon confined in ZnSe barrier layers and Zn0.76Cd0.24Se-like LO phonon confined in well layers are observed under the excitation of 457. 9nm line at room temperature and 77K, respectively. The origins of this two kinds of LO phonon are discussed.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1995年第2期130-133,共4页
Chinese Journal of Luminescence
基金
国家"863"计划光电子主题国家"攀登计划"
中国科学院长春物理所激发态物理开放实验室资助
