摘要
本文研究了７７～３００Ｋ温度区间内ＺｎＳｅ：Ａｌ的电学性能，讨论了ＺｎＳｅ：Ａｌ中的缺陷及其补偿比，得出了随掺杂温度的升高，极化光学声子对载流子的散射作用变弱，电离杂质对载流子的散射作用变强的结论．同时，本文也给出了霍尔系数、载流子浓度与掺杂温度及测量温度的关系，计算了Ａｌ施主能级的电离能．
Electrical properties of ZnSe:Al have been measured by the method of Van de Pauw from 77K to 300K. Defects in ZnSe:Al have been discussed and compensatingratio has been calculated.Optical phonon seatting to carrier becomes week and ionized impurity seatting becomes strong with the increase of doping temperature.Hall parameters, carrier concentration and Al ionized energy in ZnSe: Al were also calculated in this paper.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1995年第2期149-152,共4页
Chinese Journal of Luminescence
关键词
缺陷
散射
硒化锌
铝
掺杂
电学性能
温度
ZnSe:Al,defect,compensating ratio, seatting mechanism
