摘要
本文从理论上分析了低激发密度下,选通光分别为脉冲光和连续光时,孔深随时间的变化,得到可以通过脉冲光烧孔、连续光选通的方法缩短烧孔时间.应用BaFCl0.5Br0.5:Sm2+(2%)进行了实验,分析了单脉冲烧孔的孔深.
heoretical work on the relationship between the hole depth and different gating light schemes in photon gated spectral hole burning under the weak field limit was reported.It is possible to burn a hole with pulsed laser and then to gate it with continuous light for shortening the burning time of a hole.Using experimental results conducted on the sample BaFCl0.5 Br0.5:Sm2+ (2%),we also analyse the hole depth after one pulse.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1995年第1期5-10,共6页
Chinese Journal of Luminescence
基金
中国科学院长春物理研究所激发态物理开放实验室资助