多孔硅发光与量子尺寸效应的实验研究

EXPERIMENT STUDY OF RELATION BETWEEN POROUS Si LUMINESCENCE AND QUANTUM SIZE EFFECT

利用电化学阳极腐蚀的方法制备了多孔硅膜，实验发现多孔硅膜为多层结构，表面层为纳米结构，其余为微米结构，多孔硅的物理及化学结构的研究表明多孔硅是一种表面上含硅、氧、氢、氟元素组成的化合物包覆着的纳米晶硅粒和微米硅丝．多孔硅的发光主要来自表面纳米结构层，亚微米结构层并未见发光，从实验上证实了多孔硅的发光与量子尺寸效应紧密关联．

lectrochemical etching method was employed to fabricate porous silicon(PS)film.Experiment results showed that PS film had multilayer structures.Surface layer was nanostructure,other layers were μm-structure layers.Study of physical and chemical structure of PS film showed that PS was composed of nanosilicon and μm-silicon wires surrounded by Si.O.H. F compounds. PS luminescence comes from surface nanostructure layer.No light emitted from μm-structure layers.We proved from experiment that PS luminescence was relevant to quantum size effect.