多孔硅微秒光致发光衰减

MICROSECOND PHOTOLUMINESCENCE DECAY OF POROUS SILICON

在微秒范围内测量了多孔硅的光致发光衰减，研究了衰减参数与发光波长、样品制备条件的关系，发现衰减参数与发射波长有关，但不依赖于样品制备条件．用发光三层模型解释了实验结果．

Microsecond photoluminescence decay of porous silicon has been measured.The decay parameters have been studied as a function of emission wavelength for samples at different preparation conditions.It was found that the decay parameters strongly related 'to the emission wavelengths,but showed independent to the preparation conditions of samples.The results were explained in terms of three-layer model.