应变（Ge）_5／（Si）_5超晶格的光学增益

OPTICAL GAIN OF STRAINED (Ge)_5/(Si)_5 SUPERLATTICE

本文采用具有驰豫展宽的半导体激光器密度矩阵理论计算了（Ｇｅ）５／（Ｓｉ）５超晶格的线性光增益和异质结激光器的国值电流密度，从理论上定量地比较了（Ｇｅ）５／（Ｓｉ）５超晶格和ＧａＡｓ体材料的线性光增益和阈值电流密度．

The linear gain and the threshold current density of heterostructure laser are analyzed for(Ge)5/(Si),superlattice,based on the density-matrix theory of simeconductor laser with relaxation broadening.The quantitative comparison of the linear gain and thethreshold current density for (Ge)5/(Si)5 superlattice and GaAs bulk crystal is made theoretically.