摘要
采用１２ＭｅＶ电子束辐照效应将Ｐ＋ＮＮ＋普通整流二极管改制成高频整流二极管，与传统掺金工艺相比，少子寿命控制精确；ｔｒｒ和ＶＦ的一致性和重复性好；高温性能明显改善；产品合格率提高３０％以上，工艺简单易行。
The 12 Mev electron irradiation effect has been used to ture the common P+NN+ diodes into high frequency rectifying diodes. Compared with the tiaditional gold--doping technique, this method can control the life of the minority carriers more precisely. The Trr and Vf of the diodes can be better comsistent and repeatable. And the high temperature performance is obviously improved. The rate of the qualified diodes is increased by a factor more than 30%.
出处
《辐射研究与辐射工艺学报》
CAS
CSCD
北大核心
1995年第1期1-5,共5页
Journal of Radiation Research and Radiation Processing
关键词
电子辐照
高频
整流二极管
硅
12MeV
Electron irradiation
High frequency rectifier diodes
τ-the life time of minority carriers
T_rr-reverse recovery time
V_f-fwdvoltage
