摘要
介绍了一种半绝缘ＩｎＰ（Ｆｅ）的低温氯化物气相外延（ＶＰＥ）生长方法，生长温度为５５０℃，可为金属有机气相淀积的量子阱结构二次外延半绝缘ＩｎＰ（Ｆｅ）盖层。４０μｍ层厚时电阻率超过５×１０８Ωｃｍ，临界击穿电压达到１０Ｖ以上。用这种方法制备的激光器阈值电流达８０ｍＡ，较平板式的降低３倍，远场图样平行和垂直结平面方向光功率曲线对称性良好，远场发散角，器件测试得到较好光谱。目前尚未见到其它类似报道。
The low temperature chloride VPE growth techniqe of SI:InP(Fe ) is introduced in this paper. SI-InP(Fe)insulation clad layer can be grown on the quantum well structure to obtain strip-confined lasers by the method. When the epilayer reaches 4μm thick,the critical breakdown voltage reaches 10V and theresistance is more than 5 ×108Ωcm. The threshold current descends from 250mA (without confinement) to 80mA. The farfield patterns show good symmetry and the testing spectrum of the device proved it to be up to the standard.
出处
《高技术通讯》
CAS
CSCD
1995年第11期41-44,共4页
Chinese High Technology Letters
基金
863计划资助项目
