不同晶面的HgCdTe晶片的损伤研究

STUDY ON THE DAMAGE OF HgCdTe WAFERS WITH DIFFERENT ORIENTATIONS

使用装有超微显微硬度测试仪的扫描电子显微镜，对不同取向的ＨｇＣｄＴｅ晶片施加负荷，负荷压力从２克～０．０５克。由于晶体具有各向异性，在相同压力下，不同取向的ＨｇＣｄＴｅ晶片中引起的损伤有明显差异，实验得到损伤区域的大小与晶面的关系是｛１１１｝＞｛１２１｝＞｛３５１｝。同时讨论了损伤层的结构。

By means of SEM with Ultra-Microhardnesstester,loads ranging from 2g to 0.05g were put on the HgCd Te wafers of different orient ations.Because of the anisotropic propert ies of cryst al,the same load results in varying degree of damage on differently oriented wafers,The experiment results showed that the damage area was decreasing with orientations of the HgCdTe wafer as following:{111}>{121}>{351}. The structure of damage layer was discussed as well