摘要
本文综述了离子束科学技术领域新的重大进展─从作为半导体掺杂手段的低剂量(10 ̄(11)~10 ̄(16)/cm ̄2)离子注入到高剂量(10 ̄(17)~10 ̄(18)/cm ̄2)离子注入以合成(IBS)新材料。文中讨论了高剂量注入的物理效应,利用高剂量氧注入硅合成SIMOX材料的物理过程以及离子束合成的多种应用。
The subject of this paper is a review of the recent important progress in ion beam science andtechnology─from low dose(10 ̄(11)~10 ̄(16)/cm ̄2)ion implantation as a doping method of semicon-ductors to ion beam synthesis (IBS) by high dose(10 ̄(17)~10 ̄(18)/cm ̄2) ion implantation as a means offorming new materials. The physical effects of high dose ion implantation,the formation process ofSIMOX(Separation by Implanted Oxygen) materials,and various applications of ion beam synthesisare discussed.
出处
《功能材料与器件学报》
CAS
CSCD
1995年第1X期39-48,共10页
Journal of Functional Materials and Devices
关键词
离子注入
离子束合成
SIMOX
离子束
Ion implantation
ion beam synthesis
separation by implanted oxygen(SIMOX)