摘要
首先从理论上研究了在应变情况下量子阱中能级的计算，然后利用ＬＰ－ＭＯＣＶＤ研究了ＩｎＧａＡｓ／ＩｎＰ组份的控制及生长条件，最后生长伸张应变为０．５％的四个量子阱ＩｎＧａＡｓ／ＩｎＰ结构材料，利用ＰＬ光谱测量得最小阶宽为１．８ｎｍ。
The energy levels of quantum well (QW) under differential strain have been calculated,the composition and growth rate of InGaAs matched with InP have been studied by Low Pressure Metallorganic Chemical Vapour Deposition (LP-MOCVD). Four-QW InGaAs/InP with 0. 5% tensile strain has been grown.The narrowest well width is 1. 8 nm by PL spectroscopy measurement.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1995年第3期239-243,共5页
Research & Progress of SSE
