摘要
介绍高压绝缘栅双极晶体管（ＩＧＢＴ）的终端和单元的设计与制造技术；实验验证了两种用于１０００～１２００ＶＩＧＢＴ的高压终端，研制的芯片获得了７．５Ａ，耐压１１５０Ｖ的实验结果。
In this paper, design and manufacture technique for insulated gate bipolar transistor (IGBT) terminal and cell are described. Experiments of chips and terminals with IGBT have been performed. Two kinds of terminal have been verified for 1 000-1 200 V IGBT. A 10 A/1 150 V IGBT has been obtained.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1995年第3期256-260,共5页
Research & Progress of SSE
