“Au—n^＋（薄）—InP”结构及界面特性分析

The Formation of "Metal-n￣+)(Thin)-InP"Constructure and Analysis on its Characteristics

“Ａｕ－ｎ~＋（薄）－Ｉｎｐ”结构及界面特性分析夏瑞东，陈定钦（首都师范大学物理系１０００３７）（中国科学院半导体所１０００８３）摘要采用＂ＡＥＳ＂技术分析了Ａｕ－ＩｎＰ接触在不同温度下热处理得到的结果。发现Ａｕ向Ｉｎｐ一侧内扩散，并认为正是这种高掺?..

ln this paper,the surface morphology for InP contact to Au at different heat treatment temperatures is observed by ways of auger electron spectroscopy (AES).lt is found that 5 min. after heat treatmented at 45°level, the in-diffusion depth of reaches 120A. The 'metal-n￣+(thin)InP'constructure contacts have been analysed in detail. Relationships between the deped degradation thichness (d) of Au and the barrier height lowering are obtained by theory analysisand tested by experment.