边缘增锐型相移光刻技术的研究及其数值模拟

The Study and Computer Simulation of the Side Enchancement Phase-Shift Photolithgraphy

相移光刻技术可以提高光刻设备的分辨率，为制作二元光学器件及超大规模集成电路提供了更强的技术力量，本文简单介绍相移光刻技术的基本原理，用自编的软件通过数值模拟对边缘增锐相移光刻技术做了探讨，给出了适合国内ｇ－线投影曝光机的边缘增锐型相移掩模的设计参数。

Phase-shift thchnology can improve greatly the resolution of the existing photolithgraphy equpment. It provides stronger technical tool for manufacturing binary optical elements andVLSI. The Basic principle of phase-sgift mask was introduced. The side-enchancement phase-shift thchnology was investigated through the computer simulation. The useful design parameter for developing phase-shift thchnology with domestic g-line projector was given.