共振离子化质谱在高纯材料表面杂质分析中的应用

Resonance Ionization Mass Spectrometry for Surface Impurity Analysis of High Purity Materials

用激光熔出－共振离子化质谱法测定纯铁中及高纯硅片表面的铬。测定含有１０１２原子／ｃｍ２Ｃｒ的信号强度表明本方法可测定低至１０９原子／ｃｍ２的样品，其空间分辨率为０．２ｍｍ，还可进行二维杂质元素分析。

The trace amount of Cr in a high purity iron sample and on the surface of ultra-high purity silicon wafers is analyzed by laser evaporation-resonance ionization TOF mass spectrometry.The signal intensity oberved for the Si wafer comtaminated with 1012 atoms/cm2 Cr indicates the feasibility of analyzing the surface impurity well below 109 atoms/cm2 with the spatial resolution of better than 0.2mm.Two dimensional analysis of the impurity atom is also reported.