用XRF微探针研究掺杂元素锗在单晶硅中的分布

A STUDY ON QUALITATIVE DISTRIBUTION OF IMPURITY Ge IN SILICON CRYSTAL BY X-RAY MICRO-FLUORESCENCE ANALYSIS

用同步辐射及Ｘ光管激发Ｘ射线荧光微区分析技术研究了单晶硅中掺杂元素Ｇｅ的定性分布，为半导体材料中掺杂元素行为的研究提供了一种新的方法。

The qualitative distribution of impurity Ge on the cross section of silicon crystal was studied by synehrotron radiation and X-ray tube excited X-ray micro-fluorescence analysis in this work. A new method of determination of Ge in St is offered. The result is valuable for both studying crystal growing theory and producing semiconductor materials.