摘要
本文利用分子吸收光谱法探讨了高氯酸和高氯酸镁干扰铟石墨炉原子吸收的机理。实验结果表明,其干扰均由于生成InCl分子而挥发损失的缘故。高氯酸的干扰主要发生在原子化过程中,而高氯酸镁的干扰则主要发生在灰化过程之后的升温过程中。基体改进剂钯和抗坏血酸的同时存在,能完全抑制InCl和MgCl分子的生成,从而能有效地消除其干扰。
The interfering mechanisms of perchloric acid and salt with indium in graphite furnace atomic absorption have been studied using molecular absorption spectroscopy' The results showed that the suppression effect was primarily due to the formation and loss of InCl after ashing step.The interference was due to the gas--phase reaction. On the contrary, the molecular absorbance of InCl and/or MgCI was remarkably reduced when excess palladium and ascorbic acid was added and no suppression effect was observed.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1995年第2期89-94,共6页
Spectroscopy and Spectral Analysis
关键词
铟
原子吸收
干扰机理
高氯酸
高氯酸镁
Indium, GFAA, Molecular absorption, Interfering mechanism