用LP-MOCVD对InGaAs(P)/InP材料的工艺研究

Process Investigation of InGaAs(P)/InP Materials by LP-MOCVD

我们用AIXTRON生产的LP-MOCVD系统进行了InGaAs(P)/InP材料的生长研究,用X-ray双晶衍射仪、PL光荧光光谱仪、α-台阶仪及C-V仪等分析手段,研究生长工艺对材料特性的影响,取得了很好的结果。目前,我们已掌握一套MOCVD生长材料的标准参数,利用这些参数生长了1.31μm体材料激光器和量子阱激光器结构,阈值电流密度J_(th)分别为1、1 kA/cm^2和1.0 kA/cm^2。

The LP-MOCVD epitaxial techniques are applied to study the crystal growth of material InGaAs(P)/InP. With the aids of measure methods, such as X-ray diffraction, photoluminescenee spectrum, α-step and C-V characteristics, the influence of growth processes on material characteristics is analyzed and the optimum growth parameters are obtained. In terms of these parameters, bulk material laser and quantum well laser emitting at 1.31 μm are fabricated with threshold current densities (Jth) 1.1kA/cm^2 and 1.0 kA/cm^2 respectively. This shows that we have grown high quality InGaAs(P) epitaxial strained layers.