摘要
首次用ＭＯ－ＰＶＡ、ＥＯ－ＰＶＡ两种样品．在５１４ｎｍ波长光激发下，实现了６３３ｎｍ可擦除光存储，并研究了写入光束对预激发光的依赖关系，用四能级双色光子共振模型对各种实验现象进行了解释。
We realized firstly the 633 urn erasable optical storage in two samples, MOPVA and EO-PVA, by using pre-excitation of a 514 urn Ar+ laser, and studied therelationship between pre-exciting beam and writing bans. The various experimentalphenomena were explained with the model of four-energy level and Biphoton resonance.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1995年第7期905-908,共4页
Acta Optica Sinica
基金
国家自然科学基金
