摘要
根据大截面单模脊形波导理论和双模干涉机制，在硅片直接键合、背面抛光减薄的ＳＯＩ材料上，通过氢氧化钾各向异性腐蚀的方法，成功地研制出ＳＯＩ波长信号分离器，在波长为１．３μｍ时，其插入损耗为４．８１ｄＢ，串音小于－１８．６ｄＢ。
Silicon-on-Insulator (SOI) wavelength demultiplexers are studies by using thelarge cross-section single-mode rib waveguides conditions and the two-mode interferenceprinciple in silicon direct bonding SOI with bsck-polishing.They are fabricated by usingKOH anistropic etching. Their insertion loss are measured to be down to 4. 81 dB at thewavelength of 1. 3 μm, and crosstalk is less than - 18. 6 dB at 1. 3 μm.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1995年第11期1598-1600,共3页
Acta Optica Sinica
关键词
集成光学
光通讯
光信号分离器
SOI, integrated optics, optical communications, opticaldemultiplexers.
