Si衬底上生长的GaAs薄膜中深中心发光的温度效应

Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates

测量了Ｓｉ衬底上生长的ＧａＡｓ薄膜中与深中心有关的发光带的变温光谱，研究了０．７８ｅＶ、０．８４ｅＶ和０．９３ｅＶ发光带的峰值位置和发光强度随着温度的变化关系，发现它们的发光强度随温度的变化服从描述非晶半导体中局域态发光的公式。最后讨论了这些发光带的来源。

The deep center-related photoluminescence(PL)in GaAs thin films grown onSi substrates were measured with respect to the changes of temperature. The peak energiesand PL intensities of the 0. 78 eV, 0. 84 eV and 0. 93 eV PL bands as a function oftemperature were studied. It is found that the temperature dependence of the PLintensities obeys the formula as that used for amorphous semiconductors because of theexistonce of localized states. The origins of the PL bands were discussed.