摘要
本文提出一种用直线四探针头测量金属-半导体欧姆接触接触电阻率的简捷方法.导出了适用于薄层半导体材料的接触电阻率表达式,经实验验证结果与线性传输线模型一致.
In this paper, a simple method to measure the specific contact resistance of metal-semiconductor ohmic contact is developed, using the probe heads of the inline four probes. The equations to measure the specific contact resistance for a thin semiconductor layer have been derived. The experimental results are in good agreement with the in-line geometry transmission line model.
出处
《应用科学学报》
CAS
CSCD
1989年第1期61-64,共4页
Journal of Applied Sciences