双离子注入增强退火效应的研究

ENHANCED ANNEALING EFFECT OF DOUBLE ION IMPLANTED Si-SUBSTRATE

本文介绍氩、硼离子注入的增强退火效应.四探针测试显示在500℃左右有低的薄层电阻R值,SEM观察和拉曼谱观察表明,注入区的晶格损伤得到了很好的恢复.

The enhanced annealing effect resulting from argon and boron implantation in silicon is described. The small sheet resistance value is obtained by the four-probe measurement at about 500°C. It is observed by SEM and Eaman spectroscopy that the radiation damages of crystalline lattices are well recovered.