期刊文献+

宽带隙材料作发射区的异质结光晶体管(HPT)的研究 被引量:1

Study of the Heterogeneous Phototransistor(HPT) with a Wide-gap Emitter
下载PDF
导出
摘要 本文在研究一种特珠结构的光晶体管──异质结光晶体管(HPT)的工作原理基础上,分析用宽带隙材料作发射区,可减少注入损耗,提高增益的特性。 On the basis of the study of HPT working principle,the characteristic of reducing injecting loss and increasing the gain is analysed.
出处 《广西工学院学报》 CAS 1995年第1期70-75,共6页 Journal of Guangxi University of Technology
关键词 异质结 光晶体管 增益 发射区 半导体 Heterojunction Phototransistor Gain,Wide-gap emitter
  • 相关文献

同被引文献26

  • 1薛春来,成步文,姚飞,王启明.高频大功率Si_(1-x)Ge_x/Si HBT研究进展[J].微纳电子技术,2004,41(9):14-21. 被引量:3
  • 2BANSROPUN S, WOODS R C, ROBERTS J S. Evidence of optical gain improvement in AlGaAs/GaAs heterojunction phototransistors using an emitter shoulder structure [J] . IEEE Trans Electron Devices, 2001, 48 (7): 1333.
  • 3LUNARDI L M, CHANDRASEKHAR S, GNAUCK A H, et al. 20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications [J] . IEEE Photon Technol Lett, 1995,7 (10): 1201.
  • 4RIEH J S, KLOTZKIN D, QASAIMEH O, et al. Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers [ J] .IEEE Photon Technol Lett, 1998, 10 (3): 415.
  • 5CHANDRASEKHAR S, LUNARDI L M, GNAUCK L M, et al. High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure[J].IEEE Photon Technol Lett, 1993, 5 (11): 1316.
  • 6MILANO R A, DAPKUS P D, STILLMAN G E. An analysis of the performance of beterojunction phototransistors for fiber optic communications [ J] . IEEE Trans Electron Devices,1982, 29 (2): 266.
  • 7CAMPBELL J C, OGAWA K. Heterojunction phototransistors for long-wavelength optical receivers [J] . J Appl Phys, 1982,53 (2): 1203.
  • 8BRAIN M C, SMITH D R. Phototransistors, APD-FET and PINFET optical receivers for 1-1.6 pm wavelength [J] . IEEE Trans Electron Devices, 1983, 30 (4): 390.
  • 9KAMITSUNA H, MATSUOKA Y, YAMAHATA S, et al. Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs [ J] . IEEE Trans Microwave Theory Tech, 2001, 49 (10): 1921.
  • 10KAMITSUNA H. A 15-GHz direct optical injection-locked MMIC oscillator using photosensitive HBTs [J] . IEICE Trans Electron, 1996, E79-C (1): 40.

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部