小尺寸MOS器件热载流子效应模拟

THE SIMULATION OF HOT CARRIER EFFECT IN SMALL GEOMETRY MOSFET

本文从实用的角度出发求解泊松方程.提出了一个小尺寸MOS器件热载流子效应的模拟方法.并开发了相应的模拟软件.模拟结果接近精确的二维MOST分析,并与实验吻合良好,而CPU时间却降低了1～2个数量级.

For practical use, a simulation method of hot carrier effect in the small geometry MOSFET is proposed by the direct solution of the Poisson equation and a corresponding software is developed in this paper. The result of the simulation is close to that calculated using an accurate two dimensional MOST analysis program and is in reasonable agreement with the experimental data. Also, the CPU time is one to two orders lower than that of the 2-D simulation.