适于单片集成光发射机制作的正装GaAlAs／GaAsBH激光器

A GaAlAs/GaAs BH Laser Applied to OFLC Fabrication

本文研究了一种用于单片集成光发射机而制作的正装ＳＩ衬底上的ＧａＡＩＡｓ／ＧａＡｓＢＨ激光器．其制造工艺简单，全部结构由两次外延形成．目前条宽６～８μｍ，腔长２５０μｍ的ＢＨ激光器已实现了室温连续工作，典型阈值电流为４０～５０ｍＡ，最低阈值电流为２８ｍＡ。

In this paper,a GaAlAs/GaAs BH laser on SI substrate applied to OFIC fabrication is studied.The process of fabrication is simply. All the stuctures are formed by two epitaxies.A BH laser with strip width 6-8μm and cavity length 250 μm has relized CW operation. The typical threshold current is 40￣50mA,and the lowest threshold current is 28 mA.